es1a thru es1d vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88586 revision: 27-aug-08 650 surface mount ultrafas t plastic rectifier features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? ultrafast recovery times for high efficiency ? low forward voltage, low power losses ? high forward surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. mechanical data case: do-214ac (sma) epoxy meets ul 94v- 0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test, he3 suffix for high reliability grade (aec-q101 qualified), meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 1.0 a v rrm 50 v to 200 v i fsm 30 a t rr 15 ns v f 0.92 v t j max. 150 c do-214ac (sma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol es1a es1b es1c es1d unit device marking code ea eb ec ed maximum repetitive peak reverse voltage v rrm 50 100 150 200 v maximum rms voltage v rms 35 70 105 140 v maximum dc blocking voltage v dc 50 100 150 200 v maximum average forward rectified current (fig. 1) i f(av) 1a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
es1a thru es1d vishay general semiconductor document number: 88586 revision: 27-aug-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 651 note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) units mounted on p.c.b. 5.0 x 5.0 mm (0.013 mm thick) land areas note: (1) automotive grade aec-q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage i f = 0.6 a (1) i f = 1.0 a v f 0.865 0.920 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 100 c i r 5.0 100 a maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, l rr = 0.25 a t rr 15 ns maximum reverse recovery time i f = 0.6 a, v r = 30 v, di/dt = 50 a/s, i rr =10 % i rm t j = 25 c t j = 100 c t rr 25 35 ns maximum stored charge i f = 0.6 a, v r = 30 v, di/dt = 50 a/s, i rr =10 % i rm t j = 25 c t j = 100 c q rr 10 25 nc typical junction capacitance 4.0 v, 1 mhz c j 10 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol es1a es1b es1c es1d unit typical thermal resistance (1) r ja r jl 85 35 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode es1d-e3/61t 0.064 61t 1800 7" diameter plastic tape and reel es1d-e3/5at 0.064 5at 7500 13" diameter plastic tape and reel es1dhe3/61t (1) 0.064 61t 1800 7" diameter plastic tape and reel es1dhe3/5at (1) 0.064 5at 7500 13" diameter plastic tape and reel figure 1. maximum forward current derating curve 0 1.2 8 0 90 100 110 120 130 140 150 0. 8 1.0 0.2 0.4 0.6 a v erage for w ard re ctified c u rrent (a) lead temperat u re (c) resisti v e or ind u cti v e load p.c.b. mo u nted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas figure 2. maximum non-repetitive peak forward surge current 1 10 100 5 10 15 20 25 30 0 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a)
es1a thru es1d vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88586 revision: 27-aug-08 652 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reverse leakage characteristics t j = 150 c t j = 125 c t j = 100 c t j = 25 c 100 10 1 0.1 0.01 instantaneo u s for w ard c u rrent (a) instantaneo u s for w ard v oltage ( v ) 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 t j = 150 c t j = 125 c t j = 100 c t j = 25 c percent of rated peak re v erse v oltage ( % ) 0204060 8 0 100 1000 100 10 1 0.1 instantaneo u s re v erse leakage c u rrent ( a) figure 5. typical junction capacitance figure 6. typical thermal impedance re v erse v oltage ( v ) j u nction capacitance (pf) 14 12 10 8 6 4 2 0 0.1 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p mo u nted on 0.2 x 0.2" (5 x 7 mm) copper pad areas 100 10 1 0.1 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w ) 0.030 (0.76) 0.060 (1.52) 0.00 8 (0.203) 0.194 (4.93) 0.20 8 (5.2 8 ) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.07 8 (1.9 8 ) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac (sma) mountin g pad layout 0.074 (1. 88 ) max. 0.20 8 (5.2 8 ) ref. 0.066 (1.6 8 ) mi n . 0.060 (1.52) mi n .
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